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| Datasheet File OCR Text: |
| ST 2SC1923 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications FM, RF, MIX, IF amplifier applications. The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25oC) Symbol Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC IB Ptot Tj TS Value 40 20 4 20 4 100 125 -55 to +125 Unit V V V mA mA mW O O C C SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 Characteristics at Tamb=25 OC Symbol DC Current Gain at VCE=6V, IC=1mA Current Gain Group R O Y Collector Cutoff Current at VCB=18V Emitter Cutoff Current at VEB=4V Reverse Transfer Capacitance at VCE=6V, f=1MHz Gain Bandwidth Product at VCE=6V, IC=1mA Collector-Base Time Constant at VCE=6V, IE=-1mA, f=30MHz Noise Figure at VCE=6V, IE=-1mA, f=100MHz Power Gain at VCE=6V, IE=-1mA, f=100MHz Gpe 15 18 dB NF 2.5 4 dB Cr.rbb' 30 ps fT 550 MHz Cre 0.70 pF IEBO 0.5 A ICBO 0.5 A hFE hFE hFE 40 70 100 80 140 200 Min. Typ. Max. Unit SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 0.01 F INPUT 50 DUT 6pF OUTPUT 50 15pF 2.2K 1000pF 0.01 F L1 1000pF 0.02 F 1K 0.02 F -VE (IE=-1mA) VCC L1:0.8mm SILVER PLATED COPPER WIRE, 4T,10ID,8 LENGTH Fig. 1 NF, Gpe TEST CIRCUIT PARAMETER(Typ.) (1) COMMON EMITTER (VCE=6V,IE=-1mA, f=100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Admittance Forward Transfer Admittance Phase Angle of Forward Transfer Admittance Output Conductance Output Capacitance SYMBOL gie Cie IyreI -re IyfeI -fe goe Coe TYP. 2.9 10.2 0.33 90 40 20 45 1.1 UNIT mS pF S o mS o S pF (2) COMMON BASE(VCE=6V,IE=-1mA,f=100MHz) CHARACTERISTIC Input Conductance Input Capacitance Reverse Transfer Admittance Phase Angle of Reverse Transfer Admittance Forward Transfer Admittance Phase Angle of Forward Transfer Admittance Output Conductance Output Capacitance SYMBOL gib -Cib IyrbI -rb IyfbI fb gob Cob TYP. 34 10 0.27 105 34 165 45 1.1 UNIT mS pF S o mS o S pF SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 STATIC CHARACTERISTICS COLLECTOR CURRENT IC (mA) h FE-IC 300 COMMON EMITTER VCE=6V o Ta=25 C 20 16 12 8 4 DC CURRENT h FE VCE=6V 500 450 400 350 300 250 200 150 100 I B=50 A 100 50 30 0 600 200 400 BASE CURRENT IB ( A) 0 0.2 0.4 0.6 VCE=6V 0.8 20 10 COLLECTOR EMITTER VOLTAGE VCE (V) BASE EMITTER VOLTAGE VBE (V) 30 10 0.1 COMMON EMITTER Ta=25 o C 0.3 0.5 1 3 5 10 20 COLLECTOR CURRENT IC (mA) Cie,gie-IE 30 INPUT CAPACITANCE Cie (pF) INPUT CONDUCTANCE g ie (mS) Cie 10 gie 5 3 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 1 -0.2 -0.3 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) Coe,goe-IE OUTPUT CONDUCTANCE goe ( S) 30 300 IYreI, REVERSE TRANSFER ADMITTANCE IYreI (mS) 3 re-IE OUTPUT CAPACITANCE Coe (pF) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE re ( o) COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 100 goe 1 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C 10 0.5 5 3 50 30 IYreI 0.3 -300 -100 0.1 re Coe 10 1 -50 -0.2 -0.5 -1 -3 -5 -10 0.05 -0.2 -0.3 -0.5 -1 -3 -5 -10 EMITTER CURRENT I E (mA) EMITTER CURRENT I E (mA) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 IYfeI, FORWARD TRANSFER ADMITTANCE IYfeI (mS) -100 100 fe-IE -100 100 Cib,gib-IE PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( o) INPUT CAPACITANCE Cib (pF) -50 50 fe 30 -50 INPUT CONDUCTANCE g ib (mS) IYfeI 50 gib -30 -30 30 Cib -10 10 -5 5 -0.2 -0.3 -0.5 -1 COMMON EMITTER VCE=6V f=100MHz Ta=25 o C -3 -5 -10 -10 10 -5 5 -0.2 -0.3 -0.5 -1 COMMON BASE VCB=6V f=100MHz Ta=25 o C -3 -5 -10 EMITTER CURRENT I E (mA) Cob,gob-IE 20 200 1000 EMITTER CURRENT I E (mA) IYfbI, FORWARD TRANSFER ADMITTANCE IYfbI (mS) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fb ( o) COMMON BASE VCB=6V f=100MHz Ta=25oC fb-IE OUTPUT CONDUCTANCE gob ( S) OUTPUT CAPACITANCE Cob (pF) gob 100 10 100 IYfbI 50 500 5 50 300 30 3 30 fb Cob 10 100 10 1 50 -0.2 -0.3 -0.5 -1 -3 -5 -10 5 -0.2 -0.3 -0.5 -1 COMMON BASE VCB=6V f=100MHz Ta=25 o C -3 -5 -10 EMITTER CURRENT I E (mA) EMITTER CURRENT I E (mA) IYrbI, REVERSE TRANSFER ADMITTANCE IYrbI (mS) PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE rb ( o ) -1000 1 fb-IE 20 Cie,gie-VCE INPUT CAPACITANCE Cie (pF) INPUT CONDUCTANCE g ie (mS) Cie 10 COMMON EMITTER I E=-1mA f=100MHz Ta=25 o C -500 0.5 -300 0.3 IYrbI 5 3 gie rb 0.1 COMMON BASE VCB=6V f=100MHz Ta=25 o C -0.5 -1 -3 -5 -10 -100 -50 0.05 -0.2 -0.3 1 1 3 5 10 30 EMITTER CURRENT I E (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 Coe,goe-VCE FORWARD TRANSFER ADMITTANCE IYfeI (mS) OUTPUT CONDUCTANCE g oe ( S) 10 100 -100 100 IYfeI, COMMON EMITTER I E=-1mA f=100MHz Ta=25 oC fe-VCE OUTPUT CAPACITANCE Coe (pF) PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fe ( o) 5 50 COMMON EMITTER I E=-1mA f=100MHz Ta=25 oC -50 50 IYfeI 30 fe goe 30 -30 3 boe 10 -10 1 10 0.5 -5 5 1 3 5 10 30 5 1 3 5 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) IYreI, REVERSE TRANSFER ADMITTANCE IYreI (mS) 1 COMMON EMITTER I E=-1mA f=100MHz Ta=25 oC re-VCE -100 100 Cib,gib-VCB INPUT CONDUCTANCE g ib (mS) COMMON EMITTER I E=-1mA f=100MHz Ta=25 oC PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE re ( o) INPUT CAPACITANCE C ib (pF) 0.5 -50 50 IYreI 0.3 gib 30 300 -30 Cib 10 100 0.1 re -10 50 0.05 1 3 5 10 30 -5 5 1 3 5 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-BASE VOLTAGE VCB (V) Cob,gob-VCB 30 300 IYfbI, FORWARD TRANSFER ADMITTANCE IYfbI (mS) 300 COMMON BASE I E=-1mA f=100MHz o Ta=25 C 100 fb-VCB OUTPUT CAPACITANCE Cob (pF) 10 OUTPUT CONDUCTANCE g ob ( S) 100 PHASE ANGLE OF FORWARD TRANSFER ADMITTANCE fb ( o) COMMON BASE I E=-1mA f=100MHz Ta=25 oC 5 50 50 gob 30 IYfbI 30 3 300 fb Cob 10 1 100 1 3 5 10 30 10 1 3 5 10 30 COLLECTOR-BASE VOLTAGE VCB (V) COLLECTOR-BASE VOLTAGE VCB (V) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 ST 2SC1923 IYrbI, REVERSE TRANSFER ADMITTANCE IYrbI (mS) 1 COMMON BASE I E=-1mA f=100MHz Ta=25 oC rb-VCB 20 Yie-f PHASE ANGLE OF REVERSE TRANSFER ADMITTANCE rb ( o ) INPUT SUSCEPTANCE bie (mS) f=200MHz 16 0.5 -300 0.3 IYrbI 150 12 8 100 rb 0.1 -100 4 50 27 10.7 0 5 10 15 -50 0.05 1 3 5 10 30 0 COMMON EMITTER VCE=6V I E=-1mA Ta=25 o C 20 25 30 COLLECTOR-BASE VOLTAGE VCB (V) INPUT CONDUCTANCE g ie (mS) Yfe-f FORWARD TRANSFER CONDUCTANCE g fe (mS) 0 0 10 COMMON EMITTER VCE=6V I E=-1mA Ta=25 o C -10 20 30 40 f=10.7MHz 27 50 100 50 Yoe-f 2000 OUTPUT SUSCEPTANCE boe ( S) 150 1200 100 800 FORWARD TRANSFER SUSCEPTANCE bfe (mS) 1600 COMMON EMITTER VCE=6V I E=-1mA Ta=25 o C f=200MHz -20 150 -30 200 400 27 10.7 0 0 50 20 40 60 -40 80 100 120 OUTPUT CONDUCTANCE goe ( S) Yre-f REVERSE TRANSFER CONDUCTANCE g re ( S) -200 -160 -120 -80 -40 f=10.7MHz 27 50 0 0 PC-Ta 120 COLLECTOR POWER DISSIPATION Pc (mW) -200 REVERSE TRANSFER SUSCEPTANCE bre ( S) COMMON EMITTER VCE=6V I E=-1mA Ta=25 o C 100 80 100 -400 150 -600 200 60 40 20 -800 0 0 20 40 60 80 100 120 o 140 AMBIENT TEMPERATURE Ta ( C) SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 07/12/2002 |
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